Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same

ABSTRACT

A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.

BACKGROUND

Chemical vapor deposition (CVD) techniques, such as atmospheric-pressureCVD (APCVD), low-pressure CVD (LPCVD), plasma-assisted CVD (PACVD), orplasma-enhanced CVD (PECVD) and thermal CVD, are used for depositing amaterial on a substrate. In CVD processes, a layer of material is formedby the reaction of gaseous material reactants at or near a substratesurface.

Advanced techniques including tooling and processes are being developedto meet requirements for deposition of material with increasedconformality, reduced plasma induced damage and industrial scale-upcapability.

SUMMARY

In one embodiment of the present invention, an apparatus for depositinga material on a substrate is provided. The apparatus has a processingchamber defining a processing space in which the substrate is arranged,an ultraviolet radiation assembly configured to emit ultravioletradiation into the processing space, a microwave radiation assemblyconfigured to emit microwave radiation into the processing space, and agas feed assembly configured to feed: a precursor gas into theprocessing space, and a reactive gas into the processing space, wherein:the ultraviolet radiation assembly and the microwave radiation assemblyare configured to be operated in combination to emit ultravioletradiation and microwave radiation to excite at least the reactive gas inthe processing space, and the material is deposited on the substrate inthe processing space from the reaction of the precursor gas and theexcited reactive gas.

In another embodiment of the present invention, an apparatus fordepositing a material on a substrate is provided. The apparatus has aprocessing chamber defining a processing space in which the substrate isarranged, a remote excitation chamber that defines an excitation space,wherein the excitation space is provided remotely from the processingspace, a gas feed assembly configured to feed: a precursor gas into theprocessing space, and a reactive gas into the excitation space, anultraviolet radiation assembly arranged to the remote excitationchamber, wherein the ultraviolet radiation assembly is configured toemit ultraviolet radiation into the excitation space to excite thereactive gas, a microwave radiation assembly arranged to the removeexcitation chamber, wherein the microwave radiation assembly isconfigured to emit microwave radiation into the excitation space toexcite the reactive gas, and a conduit communicating the excitationspace and the processing space to facilitate diffusion of excitedreactive gas from the excitation space to the processing space, whereinthe material is deposited on the substrate in the processing space fromthe reaction of the precursor gas and the excited reactive gas.

In another embodiment of the present invention, a method for depositinga material on a substrate is provided. The method includes feeding aprecursor gas into a processing space in which the substrate isarranged, feeding a reactive gas into the processing space, operating anultraviolet radiation assembly to emit ultraviolet radiation into theprocessing space in combination with operating a microwave radiationassembly to emit microwave radiation into the excitation space to exciteat least the reactive gas, and depositing the material on the substratein the processing space from the reaction of the excited reactive gasand the precursor gas.

In another embodiment of the present invention, a method for depositinga material on a substrate is provided. The method includes feeding aprecursor gas into a processing space defined by a processing chamber inwhich the substrate is arranged, feeding a reactive gas into anexcitation space defined by a remote excitation chamber providedremotely from the processing space, operating an ultraviolet radiationassembly to emit ultraviolet radiation into the excitation space incombination with operating a microwave radiation assembly to emitmicrowave radiation into the excitation space to excite the reactivegas, flowing the excited reactive gas from the excitation space to theprocessing space, and depositing the material on the substrate in theprocessing space from the reaction of the excited reactive gas and theprecursor gas.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a deposition apparatus according to afirst embodiment of the present invention.

FIG. 2 is another schematic diagram of the deposition apparatus with afirst configuration of an excitation assembly according to the firstembodiment of the present invention.

FIG. 3 illustrates a microwave waveguide according to the firstembodiment of the present invention.

FIG. 4 is another schematic diagram of the deposition apparatus with asecond configuration of the excitation assembly according to the firstembodiment of the present invention.

FIG. 5 is a flowchart showing a method of using a deposition apparatusaccording to second embodiment of the present invention.

FIG. 6 shows a first exemplary process sequence for operating andcontrolling a microwave radiation assembly and an ultraviolet (UV)radiation assembly according to the second embodiment of the presentinvention.

FIG. 7 shows a second exemplary process sequence for operating andcontrolling the microwave radiation assembly and the UV radiationassembly according to the second embodiment of the present invention.

FIG. 8 shows a third exemplary process sequence for operating andcontrolling the microwave radiation assembly and the UV radiationassembly according to the second embodiment of the present invention.

FIG. 9 is a flowchart showing a method of using a deposition apparatusaccording to a third embodiment of the present invention.

FIG. 10 is a schematic diagram of a deposition apparatus according to afourth embodiment of the present invention.

DETAILED DESCRIPTION

Techniques for material deposition will be described in greater detailby referring to the following description and drawings that accompanythe present application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide a thoroughunderstanding of the present invention. However, it will be appreciatedby one of ordinary skill in the art that the present invention may bepracticed without these specific details. In other instances, well-knownstructures or processing steps have not been described in detail inorder to avoid obscuring the present invention.

A deposition apparatus 10 according to a first embodiment of the presentinvention will be described in detail below with reference to FIGS. 1-4.The deposition apparatus 10 can include a processing chamber 100, asubstrate stage assembly 200, a vacuum assembly 300, a gas feed assembly400, an excitation assembly 500 including a microwave radiation assembly600 and an ultraviolet (UV) radiation assembly 700, and a controller800.

FIG. 1 is a schematic diagram of the deposition apparatus 10. Thesubstrate stage assembly 200, which is configured to hold a substrate20, is arranged within the processing chamber 100. The vacuum assembly300 is fluidly connected to the interior of the processing chamber 100to control the interior pressure within the processing chamber 100. Thegas feed assembly 400 is fluidly connected to the interior of theprocessing chamber 100 to feed one or more gases into the interior ofthe processing chamber 100. The microwave radiation assembly 600 isarranged to the processing chamber 100 to emit microwave radiation intothe interior of the processing chamber 100. The UV radiation assembly700 is provided together with the microwave radiation assembly 600 asthe excitation assembly 500 and arranged to the processing chamber 100to emit UV radiation into the interior of the processing chamber 100.The controller 800 is in communication with and controls one or more ofthe processing chamber 100, the substrate stage assembly 200, the vacuumassembly 300, the gas feed assembly 400, the microwave radiationassembly 600, and the UV radiation assembly 700, to receive informationfrom these elements and to send information and controlling instructionsto these elements.

FIG. 2 is another schematic diagram of the deposition apparatus 10.Additional detailed description of the processing chamber 100, thesubstrate stage assembly 200, the vacuum assembly 300, the gas feedassembly 400, the excitation assembly 500 including the microwaveradiation assembly 600 and the UV radiation assembly 700, and thecontroller 800 will be provided below with reference to FIG. 2.

Processing Chamber

The processing chamber 100 can include a processing chamber body 110provided along a central Z-axis in a cylindrical coordinate, and aprocessing chamber body temperature control assembly 150.

The processing chamber body 110 can include a processing chamber bodyouter wall 120 and a processing chamber body inner wall 130. Theprocessing chamber body inner wall 130 defines a processing space 140that is substantially cylindrical. The processing chamber body innerwall 130 includes an inner base wall 132 provided at a reference axiallocation Z₀ (or z=0) along the central Z-axis, an inner top wall 134provided at a height of Z_(A)>Z₀, and an inner side wall 136 alignedalong the central Z-axis and connecting inner base wall 132 and innertop wall 134. The value of Z_(A) can be determined based on the geometryof the substrate 20 to be processed by the deposition apparatus 10, andthe geometry and arrangement of the gas feed assembly 400, the microwaveradiation assembly 600 and UV radiation assembly 700. The inner basewall 132 has a radius of R₁ that can be determined based on the geometryof the substrate 20 to be processed by the deposition apparatus 10, andthe geometry and arrangement of the gas feed assembly 400, the microwaveradiation assembly 600 and UV radiation assembly 700. The processingchamber body 110 can be formed of a material such as quartz, siliconcarbide (SiC), stainless steel, or the like.

The processing chamber body temperature control assembly 150 is operatedand controlled to heat or cool the processing space 140 to a desiredtemperature and to maintain the desired temperature. For example, theprocessing chamber body temperature control assembly 150 can includeinternal conduits arranged between the processing chamber body outerwall 120 and the processing chamber body inner wall 130 for circulatinga heating or cooling medium there through to provide sufficient heatingor cooling of the processing space 140. The processing chamber bodytemperature control assembly 150 can include one or more sensors fordetecting the temperature at a corresponding one or more positions onthe processing chamber body inner wall 130. The processing chamber bodytemperature control assembly 150 can include one or more pumps andvalves that can be controlled and operated to circulate the heating orcooling medium through the internal conduits to heat or cool theprocessing space 140. In another example, the processing chamber bodytemperature control assembly 150 can include external conduits arrangedexternally of the processing chamber body 110 for circulating a heatingor cooling medium there through to provide sufficient heating or coolingof the processing space 140.

Substrate Stage Assembly

The substrate stage assembly 200 can include a substrate stage 210, adriving part 220 and a substrate stage temperature control assembly 230.

The substrate stage 210 can be formed as a disk configured to bearranged in the processing space 140. The substrate stage 210 caninclude a substrate stage surface on which the substrate 20 is mounted.The dimensions of the substrate stage 210 are determined based on thedimensions of the processing space 140 and the dimensions of thesubstrate 20 mounted on the substrate stage surface. Further, thedimensions of the substrate stage 210 can be modified to accommodate themounting of a plurality of substrates. The substrate stage 210 can beformed of a material such as quartz, ceramic, stainless steel, cermet,or the like, so as to endure the temperature and pressure atmospheres inthe processing space 140.

The driving part 220 can include a substrate stage support 222 and asubstrate stage driver 224. The substrate stage support 222 supports thesubstrate stage 210 in the processing space 140 such that the substratestage surface is positioned on a plane at an adjustable height along thecentral Z-axis. The substrate stage support 222 can be formed as a shaftthat penetrates the inner base wall 132 of the processing chamber body110. Like the substrate stage 210, the substrate stage support 222 canalso be formed of a material such as quartz, ceramic, stainless steel,cermet, or the like, so as to endure temperature and pressureatmospheres in the processing space 140. The substrate stage driver 224can include a motor mechanism for rotating the substrate stage support222 to rotate the substrate stage 210 about the central Z-axis and tomove substrate stage support 222 along the central Z-axis to change theposition of the substrate stage surface on the central Z-axis. The motormechanism can be controlled and operated to rotate the substrate stage210 and to change the position of substrate stage surface along thecentral Z-axis at an adjustable speed.

The substrate stage temperature control assembly 230 is configured toheat or cool the substrate stage 210 to thereby heat or cool thesubstrate 20 mounted on the substrate stage 210.

The substrate stage temperature control assembly 230 can include aresistance heater 232. The substrate stage 210 can be resistively heatedby applying an electrical current from a power supply to the resistanceheater 232. The substrate 20 is, in turn, heated by the substrate stage210.

The substrate stage temperature control assembly 230 can include aheating or cooling medium circulation assembly 234 for circulating aheating or cooling medium through the substrate stage 210. The heatingor cooling medium circulation assembly 230 can include an inlet, anoutlet, one or more conduits in liquid communication with the inlet andthe outlet, a temperature sensor, control valves and a pump. The one ormore conduits can be embedded in the substrate stage 210 to allow forthe flow of the heating or cooling medium, such as water, from the inletto the outlet to heat or cool the substrate stage 210. The temperaturesensor can be configured to sense the temperature of the substrate stage210, the substrate 20, or both. The control valves and pump can beoperated to control the flow of the heating or cooling medium throughthe inlet, the one or more conduits and the outlet to control thetemperature of the substrate stage 210, the substrate 20, or both.

The substrate stage temperature control assembly 230 can be controlledand operated to heat the substrate stage 210 to a predeterminedtemperature range depending upon the process requirement. In a firstexample, in a process for deposition of polymeric substrates, thesubstrate stage temperature control assembly can be controlled to heatthe substrate stage 210 to maintain a substrate temperature of lowerthan 100° C. In a second example, in a process for device fabrication,the substrate stage temperature control assembly 230 can be controlledand operated to heat the substrate 20 to maintain a substratetemperature of between 350° C. to 400° C.

Gas Feed Assembly

The gas feed assembly 400 is configured to feed one or more gases fromone or more gas sources into the processing space 140. For example, thegas feed assembly 400 can be configured to feed one or more precursorgases, one or more reactive gases, one or more carrier gases, and one ormore mixtures of precursor, reactive and carrier gases into theprocessing space 140.

Examples of precursor gases include hydrocarbons such as methane,ethane, ethylene, acetylene, propane, benzene and combinations thereof.Other examples of precursor gases include metal chlorides, metalhydrides, carbo-silanes, siloxanes, organosilicons and combinationsthereof. The precursor gases can be used in combination with reactivegases such as hydrogen, ammonia, nitrous oxide, nitrogen, oxygen, ozoneand the like for deposition. Examples of carrier gases include inertgases such as argon and helium.

The gas feed assembly 400 can be configured to feed one or more gasesthrough a port which opens into the processing space 140. The gas feedassembly 400 can include a conduit 410 providing fluid communicationbetween one or more gas sources 420 and the port opening into theprocessing space 140. The conduit 410 can be a manifold extending fromthe one or more gas sources 420. The gas feed assembly 400 can includeone or more mass flow controllers 430 that can be controlled andoperated to control the flow rate of the one or more gases through theconduit 410, and one or more shut off valves 440 to stop the flow of theone or more gases through the conduit 410.

In a first example, the port can be positioned in the inner side wall136 of the processing chamber body 110 and relative to the microwaveassembly 600 and the UV radiation assembly 700 such that the one or moregases fed into the processing space 140 can be coupled to the microwaveradiation generated by the microwave assembly 600 and the UV radiationgenerated by the UV radiation assembly 700.

In a second example, the port can be positioned in the inner top wall134 of the processing chamber body 110 above the substrate 20. Ashowerhead can be arranged downstream of and be connected to the port todistribute the one more gases fed into the processing space 140.

In a third example, the gas feed assembly 400 can include a ring-shapedconduit 410 arranged to be aligned around the central Z-axis. Thering-shaped conduit 410 provides fluid communication between the one ormore gas sources 420 and a plurality of ports 412 distributed along theinner side wall 136 of the processing chamber body 110.

In the third example, the gas feed assembly 400 can be configured tofeed one more gases through a plurality of ports which open into theprocessing space 140. The plurality of ports can be divided into aplurality of groups, wherein gas feed through each group of ports can beseparately controlled. For example, a precursor gas or a mixture of aprecursor gas and a carrier gas can be fed through a first group of theplurality of ports into the processing space 140, and a reactive gas ora mixture of a reactive gas and a carrier gas can be fed through asecond group of the plurality of ports into the processing space 140.

In the third example, the plurality of ports can be distributeduniformly along the circumference of the inner side wall 136 of theprocessing chamber body 110 at a single height along the central Z-axisor at variable heights along the central Z-axis. The distributedarrangement of the plurality of ports can increase uniformity of the oneor more gases in the processing space 140.

In a fourth example, the gas feed assembly 400 can include one or moreconduits 410 configured to extend past the processing chamber body innerwall 130 of the processing chamber body 110 into the processing space140. The portion of the one or more conduits 410 extending into theprocessing space 140 can be configured to extend and retract to positionthe one or more ports arranged at an end of the one or more conduits 410within the processing space 140. Specifically, the portion of the one ormore conduits 410 extending into the processing space 140 can include acoaxial inner conduit and outer conduit where the port is arranged onthe inner conduit and the inner conduit can move relative to the outerconduit to position the port at a variable position along the centralZ-axis.

Vacuum Assembly

The vacuum assembly 300 can include a vacuum pump 310 that is operatedand controlled to evacuate the processing space 140 through a duct to apressure suitable for depositing material on the substrate 20. The ductcan be arranged in the inner base wall 132 of the processing chamberbody 110. The vacuum assembly 300 can include a plurality of ductsarranged in the inner base wall 132 of the processing chamber body 110.The plurality of ducts can be arranged around the central Z-axis toprovide a predetermined distance between each of the plurality of ducts.The plurality of ducts are fluidly communicated with the vacuum pump310. The vacuum assembly 300 can further include a throttle valve on thepump inlet to regulate the pumping speed and the pressure in theprocessing chamber 100. The vacuum assembly 300 can further include atrap for collecting unreacted precursor material and reaction by-productfrom the processing space 140.

Excitation Assembly

The excitation assembly 500 includes the microwave radiation assembly600 and the UV radiation assembly 700. The microwave radiation assembly600 generates microwave radiation and emits the microwave radiation intothe processing space 140. The UV radiation assembly 700 generates UVradiation and emits the UV radiation into the processing space 140. Themicrowave radiation assembly 600 and the UV radiation assembly 700 willbe described in further detail below.

The microwave radiation assembly 600 and the UV radiation assembly 700can be independently controlled and operated. As will be described infurther detail below, the microwave radiation assembly 600 and the UVradiation assembly 700 can be controlled and operated in sequence orsimultaneously.

In the first embodiment of the present invention, a portion or all ofthe processing space 140 acts as an excitation space into which reactivegas is fed. For example, a portion of the processing space 140 above thesubstrate 20 can act as the excitation space. The microwave radiationassembly 600 and the UV radiation assembly 700 are operated incombination to emit microwave radiation and UV radiation into theexcitation space to form activated species including radicals, ions andother excited species via application or coupling of energy from themicrowave radiation and UV radiation to the reactive gas.

Although not wishing to be bound by any particular theory, it is thoughtthat UV radiation generated by the UV radiation assembly 700 may promotethe formation of activated species of one or more reactive gases so thata smaller field intensity of the microwave radiation generated by themicrowave radiation assembly 600 is sufficient to excite the plasma.Microwave plasma enhanced chemical vapor deposition will generate aplasma ball source of highly dense reactive species without the ionbombardment onto the substrate. The microwave energy source is intendedto generate plasma of reactive gases broken down in specificdissociative reaction pathway and until the more complex downstreamdeposition chemistries occur. The low power microwave plasma willdissociate the reactants and generate a high number of low energyreactive species that lead to specific reaction pathways. The additionalUV radiation will enhance the dissociation and reaction of the reactionspecies to a specific and stable reaction pathway that enhance thegrowth of high quality film (diamond is an example) on the substratesurface without the normally high thermal energy required. This willlower the deposition temperature, increase the deposition rate andenhance the deposited film's quality, properties and performance.

Microwave Radiation Assembly

The microwave radiation assembly 600 can include a microwave powersource 610 and a microwave applicator 630.

In a first example, the microwave power source 610 can include amagnetron 612 or other known devices for generating microwave radiationat a frequency sufficient to excite the one or more gases fed to theprocessing space 140 by the gas feed assembly 400. The microwave powersource 610 can include a coupling means 614 including a circulator and atuner.

In the first example, the microwave applicator 630 can include awaveguide, a microwave horn antenna arranged to the processing chamberbody 110 and a dielectric window to cover the aperture of the microwavehorn antenna and to be in contact with the inner wall 130 of theprocessing chamber body 110 to seal the processing space 140. Thewaveguide can be a coaxial, cylindrical, or rectangular waveguide. Thedielectric window can be formed of a mixed glass, quartz, or ceramicseal plate. The microwave applicator 630 can be positioned in the innerside wall 136 or the inner top wall 134 of the processing chamber body110. Microwave radiation generated by the microwave power source 610 ispropagated by the microwave applicator 630 and emitted through thedielectric window into the processing space 140.

In a second example, the microwave radiation assembly 600 can include aplurality of microwave power sources 610 and a corresponding pluralityof microwave applicators 630. The plurality of microwave applicators 630can include a plurality of microwave horn antennas arranged to theprocessing chamber body 110, and a corresponding number of dielectricwindows to cover the apertures of the microwave horn antennas.

In the second example, the plurality of microwave horn antennas can bepositioned in the inner side wall 136, the inner top wall 134, or boththe inner side wall 136 and the inner top wall 134 of the processingchamber body.

In the second example, a plurality of microwave horn antennas can bearranged around the circumference of the inner side wall 136 with apredetermined distance provided between each microwave horn antenna. Theplurality of microwave horn antennas can be arranged at a single heightalong the central Z-axis. Alternatively, the plurality of microwave hornantennas can be arranged at a plurality of heights along the centralZ-axis.

In a third example, the microwave applicator 630 can include a pluralityof microwave horn antennas arranged to the processing chamber body 110,and a corresponding number of dielectric windows to cover the aperturesof the microwave horn antennas. The plurality of microwave horn antennascan be positioned in the inner side wall 136, the inner top wall 134, orboth the inner side wall 136 and the inner top wall 134 of theprocessing chamber body 110. The plurality of microwave horn antennascan be grouped into arrays and each array of microwave horn antennas isconnected via a waveguide to an independently controlled and operatedmicrowave power source 610.

In the above-described examples, the one or more microwave horn antennacan be replaced with another type of antenna, such as, a microwaveslotted aperture antenna and a microwave leaky waveguide mode antenna.

In a fourth example, the microwave applicator 630, as shown in FIG. 3,can include an annular waveguide 632 having a surface provided with aplurality of slots 634 for radiating microwave radiation, and adielectric window 636 that seals the inside of the processing space 140.The annular waveguide 632 can be arranged to the inner side wall 136 ofthe processing chamber body 110. The annular waveguide 632 can includean outer cylindrical wall, an inner cylindrical wall, and planar orring-shaped walls connecting the outer cylindrical wall and the innercylindrical wall. The inner cylindrical wall can include a plurality ofslots 634 arranged to be equidistant from one another in a radialdirection along the central Z-axis. A cylindrical dielectric window canbe provided between the inner cylindrical wall of the annular waveguide632 and the processing chamber body 110 to seal the processing space 140while allowing microwave radiation to pass there through. Alternatively,a plurality of dielectric windows 636 can be provided between the slots634 of the inner cylindrical wall of the annular waveguide 632 to sealthe processing space 140 while allowing microwave radiation to passthere through. Further, as illustrated in FIG. 3, an aperture formed inthe inner wall 130 of the processing chamber body 110 to connect thedielectric window 636 and the slot 634 of the annular waveguide 632 canbe formed as a horn antenna 638.

In a fifth example, an annular waveguide 632 can be arranged to theinner top wall 134 of the processing chamber body 110 as illustrated inFIG. 4. The annular waveguide 632 is provided with a plurality of slits634 such that microwave radiation generated by the microwave powersource 610 and introduced into the annular waveguide 632 is emittedthrough the plurality of slits 634 into the processing space 140. Theplurality of slits 634 can be arranged to be equidistant from oneanother in a radial direction along central Z-axis. A dielectric window636 can be provided between the annular waveguide 632 and the processingspace 140 to seal the processing space 140 while allowing microwave topass there through. It is possible to provide other patterns of slit orslits to the annular waveguide 632. For example, a spiral slit can beprovided to the annular waveguide 632. The width and pitch of the spiralslit can be set to promote uniform intensity distribution of theradiated microwave.

UV Radiation Assembly

The UV radiation assembly 700 can include a UV source unit 710, anoptical window 720, and a movable protective shutter 730.

The UV source unit 710 includes a UV source housing 712 and a UV source714 arranged in the interior space of the UV source housing 712 foremitting UV radiation into the processing space 140 of the processingchamber body 110.

A first example of the UV radiation assembly 700 will be described withreference to FIG. 2. The UV source housing 712 can be mounted andconnected to the inner top wall 134 of the processing chamber body 110.The UV source 714 is configured to generate and emit UV radiationthrough an opening, provided to connect the interior space of the UVsource housing 712 and the processing space 140 of the processingchamber body 110, into the processing space 140. The UV source 714 isconfigured and arranged to direct UV radiation generally uniformly alongthe central Z-axis into the processing space 140 and in the direction ofthe substrate stage 210 and the inner base wall 132 of the processingchamber body 110. The interior surface of the UV source housing 712 canbe coated in reflective material to reflect UV radiation into theprocessing space 140.

In the first example of the UV radiation assembly 700 where the UVsource housing 712 is mounted and connected to the inner top wall 134 ofthe processing chamber body 110, the microwave applicator 630 of themicrowave radiation assembly 600 can be arranged on the inner side wall136 of the processing chamber body 110. As illustrated in FIG. 2, themicrowave applicator 630 can include the annular waveguide 632,described above, wherein the annular waveguide 632 can be arranged tothe inner side wall 136 of the processing chamber body 110. Otherconfigurations described above in which the microwave applicator 630 isarranged to the inner side wall 136 of the processing chamber body 110can also be implemented and are within the scope of the presentinvention.

In the first example, the optical window 720 is mounted to the UV sourcehousing 712 and provided between the UV source 714 and the inner basewall 132 of the processing chamber body 110. The optical window 720consists of a material selected based on the UV wavelength to bedirected into the processing space 140. Examples of materials selectedfor the optical window 720 include quartz, magnesium fluoride, andcalcium fluoride. In an example, the optical window 720 can be formed asa lens for focusing the UV radiation to a portion of the processingspace 140. The UV source 714 is housed air-tightly by the optical window720 and the UV source housing 712.

In the first example, the protective shutter 730 is provided to movebetween a first position aligned with the central Z-axis and a secondposition that is not aligned with the central Z-axis. In the firstposition, the protective shutter 730 covers the optical window 720 whenthe UV radiation assembly 700 is not operated. The protective shutter730 may be positioned by, for example, a handle or by acomputer-controlled positioning mechanism.

A second example of the UV radiation assembly 700 will be described withreference to FIG. 4. A plurality of UV source housings 712 can bemounted and connected to the inner side wall 136 of the processingchamber body 110. The UV source housings 712 can be arranged radiallyalong the circumference of the inner side wall 136 to be equidistantfrom one another in a radial direction along central Z-axis. The UVsource 714 provided in each of the plurality of UV source housings 712are configured to emit UV radiation through an opening, provided toconnect the interior space of each UV source housing 712 and theprocessing space 140 of the processing chamber body 110, into theprocessing space 140. The UV source 714 can be configured and arrangedto direct UV radiation to a predetermined position along the centralZ-axis in the processing space 140 above the substrate 20 and thesubstrate stage 210.

In the second example of the UV radiation assembly 700 where the UVsource housing 712 is mounted and connected to the inner side wall 136of the processing chamber body, the microwave applicator 630 of themicrowave radiation assembly 600 can be arranged to the inner top wall134 of the processing chamber body. As illustrated in FIG. 4, themicrowave applicator 630 can include the annular waveguide 632,described above, wherein the annular waveguide 632 can be arranged tothe inner top wall 134 of the processing chamber body 110. Otherconfigurations described above in which the microwave applicator 630 isarranged to the inner top wall 134 of the processing chamber body canalso be implemented and are within the scope of the present invention.

The UV source 714 described in the first and second examples can includeone or more UV lamps that can be individually or collectively controlledto emit UV radiation sufficient to provide activation energy to exciteand/or dissociate a reactive gas fed by the gas feed assembly 400 intothe processing space 140. The UV source 714 can include, for example,one or more deuterium lamps.

The UV source 714 can be configured to allow a first set of UV lamp (orUV lamps) to be exchanged for a second set of UV lamp (or UV lamps),wherein the first set of UV lamp(s) has a first frequency spectrum, andthe second set of UV lamp(s) has a second frequency spectrum differentfrom the first frequency spectrum.

Controller

The controller 800 can be communicatively connected to control one ormore of the processing chamber 100, the substrate stage assembly 200,the vacuum assembly 300, the gas feed assembly 400, and the excitationassembly 500 including the microwave assembly 600 and the UV radiationassembly 700.

The controller 800 and other aspects of the present invention can beimplemented as a program, software, or computer instructions embodied ina computer or machine usable or readable device, which causes thecomputer or machine to perform the steps of the instructions whenexecuted on the computer or machine. A computer or machine usable orreadable device can include any tangible or physical medium that canstore data and/or computer instructions, and, for example, that can beread and/or be executed by a computer, machine or the like. Examples ofa computer or machine usable or readable device can include but are notlimited to, memory devices (such as a random access memory (RAM), aread-only memory (ROM) and the like), discs, optical storage devices,and others.

The controller 800 and other aspects of the present disclosure above maybe implemented on a computer system. The computer system may be of anytype of known or will be known systems and may typically include ahardware processor, memory device, a storage device, input/outputdevices, internal buses, and/or a communications interface forcommunicating with other computer systems in conjunction withcommunication hardware and software and so on.

The terms “computer system” as used in the present disclosure mayinclude a variety of combinations of fixed and/or portable computerhardware, peripherals, and software components stored on storagedevices. The computer system may include a plurality of individualcomponents that are networked or otherwise linked to performcollaboratively, or may include one or more stand-alone components. Thehardware and software components of the computer system of the presentapplication may include and may be included within fixed and portabledevices such as a desktop, a laptop or a server.

Method of Use of Deposition Apparatus

A method of using the deposition apparatus 10 according to a secondembodiment of the present invention will be described below withreference to FIG. 5.

In step S110, pre-deposition preparation is performed. Pre-depositionpreparation can include: a step S112 of mounting one or more substrateson the substrate stage 210 within the processing space 140; a step S114of controlling and operating the substrate stage temperature controlassembly 230 to heat the substrate 20 to a suitable temperature and tomaintain the temperature; a step S116 of controlling and operating thedriving part 220 to rotate the substrate stage 210 at a suitable speedand to adjust the height of the substrate stage 210 along the centralZ-axis; and a step S118 of controlling and operating the vacuum assembly300 to evacuate the processing space 140 to a pressure suitable fordepositing the desired material on the substrate 20 and to maintain thepressure.

In step S120, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of a carrier gas A through one or more portsin the processing chamber body 110 and into the processing space 140. Instep S130, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of a precursor gas B through one or more portsin the processing chamber body 110 and into the processing space 140 toform a saturated layer on the surface of the substrate 20. In step S140,the gas feed assembly 400 is controlled and operated to establish asuitable flow of reactive gas C through one or more ports of theprocessing chamber body 110 and into the processing space 140.

In step S150, the excitation assembly 500 is controlled and operated toexcite reactive gas C in the processing space 140. Step S150 caninclude: step S152 of controlling and operating the UV radiationassembly 700 to generate UV radiation and to emit UV radiation into theprocessing space 140 to excite the reactive gas C; and step S154 ofcontrolling and operating the microwave radiation assembly 600 togenerate microwave radiation and to emit the microwave radiation intothe processing space 140 to excite the reactive gas C. In Step S150, themicrowave radiation assembly 600 and the UV radiation assembly 700 canbe controlled to tune the excitation conditions such that primarily oronly the reactive gas C is excited.

Steps S120-150 can be repeated to form compound thin films of a desiredthickness.

In step S160, after the operation of steps S120-150 have been stopped,the vacuum assembly 300 can be controlled and operated to evacuateexcess gases and reaction byproduct.

The method of using the deposition apparatus 10 for material depositionmay omit some of the recited steps. For example, step S114 ofcontrolling and operating the substrate stage temperature controlassembly 230 to heat the substrate 20 to a suitable temperature and tomaintain the temperature, and step S116 of controlling and operating thedriving part 220 to rotate the substrate stage 210 at a suitable speedmay be omitted.

Further, the method of using the deposition apparatus 10 for materialdeposition is not limited by the recited order of the steps. In oneexample, the order in which steps S112-S118 are performed can bechanged. In another example, one or more of steps S112-S118 can beperformed sequentially or simultaneously.

Still further, the method of using the deposition apparatus 10 formaterial deposition can include operating and controlling the microwaveradiation assembly 600 and the UV radiation assembly 700 in steps S152and S154 in various process sequences.

FIG. 6 shows a first exemplary process sequence for operating andcontrolling the microwave radiation assembly 600 and the UV radiationassembly 700. First, a precursor gas flows in a pulse, and then, areactive gas flows in a pulse. During the flow of the reactive gas, themicrowave radiation assembly 600 and the UV radiation assembly 700 areoperated. In the first exemplary process sequence, the microwaveradiation assembly 600 and the UV radiation assembly 700 are operatedsimultaneously for a predetermined period.

FIG. 7 shows a second exemplary process sequence for operating andcontrolling the microwave radiation assembly 600 and the UV radiationassembly 700. First, a precursor gas flows in a pulse, and then, areactive gas flows in a pulse. During the flow of the reactive gas, themicrowave radiation assembly 600 and the UV radiation assembly 700 areoperated. In the second exemplary process sequence, the UV radiationassembly 700 is operated for a predetermined period, and the microwaveradiation assembly 600 is operated with pulse-time-modulation.

FIG. 8 shows a third exemplary process sequence for operating andcontrolling the microwave radiation assembly 600 and the UV radiationassembly 700. First, a precursor gas flows in a pulse, and then, areactive gas flows in a pulse. During the flow of the reactive gas, themicrowave radiation assembly 600 and the UV radiation assembly 700 areoperated. In the third exemplary process sequence, the UV radiationassembly 700 and the microwave radiation assembly 600 are operated insequence, with the operation of the UV radiation assembly 700 precedingthe operation of the microwave radiation assembly 600. Alternatively, inthe third exemplary process sequence, the operation of the microwaveradiation assembly 600 can precede the operation of the UV radiationassembly 700.

The method of using the apparatus 10 can further include a plurality ofcycles, wherein each cycle includes a pulse of precursor gas, a pulse ofreactive gas, and one or more of the above-described sequences foroperating the microwave radiation assembly 600 and the UV radiationassembly 700.

The method of using the apparatus 10 for material deposition can furtherinclude the controller 800 controlling one or more of the processingchamber 100, the substrate stage assembly 200, the vacuum assembly 300,the gas feed assembly 400, and the excitation assembly 500 including themicrowave assembly 600 and the UV radiation assembly 700 in performingthe above-described steps.

A first example of the method of using the apparatus 10 for forming alayer of titanium on a silicon substrate will be described.

In step S110, pre-deposition preparation is performed. Step S110 caninclude: step S112 in which the silicon substrate is mounted on thesubstrate stage 210 within the processing space 140; step S114 in whichthe substrate stage temperature control assembly 230 is controlled andoperated to heat the silicon substrate; step S116 in which the drivingpart 220 is controlled and operated to elevate the substrate stage 210to a suitable height and to rotate the substrate stage 210 at a suitablespeed; and step S118 in which the vacuum assembly 300 is controlled andoperated to evacuate the processing space 140 to a suitable pressure.

In step S120, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of carrier gas A through one or more portsinto the processing space 140.

In step S130, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of a precursor gas of titanium tetrachloride(TiCl₄) through one or more ports into the processing space 140. AfterS130, the TiCl₄ gas molecules are adsorbed onto the surface of thesubstrate and a saturated layer of TiCl₄ is formed. In a modification ofthe method 100, the microwave radiation assembly 600 can be controlledand operated to emit microwave radiation and the UV radiation assembly700 can be controlled and operated to emit UV radiation to pre-treat thesurface of the substrate to promote adsorption of TiCl₄ gas molecules.

In step S140, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of a reactive gas of hydrogen (H₂) gas throughone or more ports into the processing space 140.

In step S152, the UV radiation assembly 700 is controlled and operatedto emit UV radiation to break the bonds of the H₂ molecule, making thehydrogen atoms available to react with the chlorine atoms in thesaturated layer. The UV radiation also breaks the bonds between thechlorine atoms and the titanium atoms allowing the chlorine to reactfreely with the hydrogen. The hydrogen and chlorine react to form areaction byproduct that is evacuated in step S160. In step S154, themicrowave radiation assembly 600 is controlled and operated to supplymicrowave energy from the magnetron to ionize the hydrogen gas togenerate hydrogen ions (H⁺) which reacts with the chlorine atoms in thesaturated layers to form hydrogen chloride. Hydrogen chloride is areaction byproduct that is exhausted out of the processing space 140 instep S160.

Following step S150, including steps S152 and S154, a titanium layerresults. Steps S152 and S154 can be performed simultaneously or insequence.

A second example of the method of using the apparatus 10 for forming alayer of titanium nitride on a silicon substrate will be described.

In step S110, pre-deposition preparation is performed. Step S110 caninclude: step S112 in which the silicon substrate is mounted on thesubstrate stage 210 within the processing space 140; step S114 in whichthe substrate stage temperature control assembly 230 is controlled andoperated to heat the silicon substrate; step S116 in which the drivingpart 220 is controlled and operated to elevate the substrate stage 210to a suitable height and to rotate the substrate stage 210 at a suitablespeed; step S118 in which the vacuum assembly 300 is controlled andoperated to evacuate the processing space 140 to a suitable pressure.

In step S120, the gas feed assembly 400 is controlled and operated toestablish a suitable flow of carrier gas A through one or more portsinto the processing space 140. In step S130, the gas feed assembly 400is controlled and operated to establish a suitable flow of a precursorgas of titanium tetrachloride (TiCl₄) through one or more ports into theprocessing space 140. The TiCl₄ gas molecules are adsorbed onto thesurface of the substrate and a saturated layer of TiCl₄ is formed. Instep S140 the gas feed assembly 400 is controlled and operated toestablish a suitable flow of a reactive ammonia (NH₃) gas through one ormore ports into the processing space 140.

In step S152, the UV radiation assembly 700 is controlled and operatedto emit UV radiation to dissociate the chlorine atoms from the titaniumatoms. The NH₃ gas reacts with the titanium to form a titanium nitridelayer. In step S154, the microwave radiation assembly 600 is controlledand operated to emit microwave radiation to dissociate the bonds betweenthe nitrogen and hydrogen atoms of the NH₃ gas and the chlorine andtitanium atoms of the TiCl₄ gas. The titanium atoms react with thenitrogen atoms to form a saturated layer of titanium nitride. Steps S152and S154 can be performed simultaneously or in sequence.

Method of Use of Deposition Apparatus to Form Diamond Type Carbon Films

Next, a method of synthesizing a diamond type carbon film on a substrateusing the deposition apparatus 10 from an admixture of a hydrocarbonwith hydrogen according to a third embodiment of the present inventionwill be described with reference to FIG. 9.

Suitable substrates which can be coated with the diamond type carbonfilm include materials such as plastics, metals, various types of glass,magnetic heads, electronic chips, electronic circuit boards,semiconductor devices and the likes thereof. The substrate to be coatedcan be any shape or size provided that the substrate can be placed intothe processing space 140 and mounted to the substrate stage 210. Thus,regular or irregular shape objects having any dimension can be used.

In step S210, pre-deposition preparation is performed. Pre-depositionpreparation can include: a step S212 of mounting one or more substrateson the substrate stage 210 within the processing space 140; a step S214of controlling and operating the substrate stage temperature controlassembly 230 to heat the substrate 20 to a suitable temperature and tomaintain the temperature; a step S216 of controlling and operating thedriving part 220 to rotate the substrate stage 210 at a suitable speedand to adjust the height of the substrate stage 210 along the centralZ-axis; and a step S218 of controlling and operating the vacuum assembly300 to evacuate the processing space 140 to a pressure suitable fordepositing diamond type carbon film on the substrate 20 and to maintainthe pressure.

In step S214, the substrate stage temperature control assembly 230 iscontrolled and operated to heat the substrate 20 to a temperaturesuitable for a depositing diamond type carbon film and compatible withthe substrate 20. For example, the substrate stage temperature controlassembly can be operated and controlled to heat the substrate 20 toabout 25° C. to 400° C. In a preferred embodiment, the substrate 20 isheated to a temperature from about 200° C. to 300° C. Most preferably,the substrate 20 is heated to a temperature of about 200° C. As part ofstep S240, the substrate stage temperature control assembly 230 iscontrolled and operated to hold the temperature of the substrate 20constant throughout the deposition process.

In step S218, the vacuum assembly 300 is controlled and operated toevacuate the processing space 140 to a pressure suitable for depositingdiamond type carbon film on the substrate 20. For example, the vacuumassembly 300 is controlled and operated to evacuate the processing space140 to 10⁻⁴ to 10⁻⁷ Torr.

Then, in step S220, depending on the type of substrate used, one or moreof the gas feed assembly 400, microwave radiation assembly 600, and theUV radiation assembly 700 can be controlled and operated to subject thesubstrate to in-situ plasma cleaning prior to depositing the diamondtype carbon film. Suitable cleaning techniques employed may include H₂,Ar, O₂, N₂ and NH3 plasma/UV/thermal sputter etching techniques.

After achieving and maintaining the desired substrate temperature, instep S230, the gas feed assembly 400 is operated and controlled to feeda pre-mixed hydrocarbon hydrogen gas mixture into the processing space140. The hydrocarbon gas which may be used may be any hydrocarboncompound which is first capable of being gaseous and then able to form aplasma at the reaction condition employed. The term hydrocarbon impliesthat the molecules which make up the compound contains only carbon andhydrogen atoms. Saturated or unsaturated hydrocarbon compounds may beemployed by the method 200. A saturated hydrocarbon compound is acompound whose molecules contain only carbon single bonds while anunsaturated compound is a compound whose molecules contain carbon doubleor triple bonds. Suitable hydrocarbons contemplated by the method 200include alkanes, alkenes and alkynes.

Alkanes are compounds having molecules containing only single bondsbetween carbon atoms. Suitable alkanes which may be employed by theabove-described method of synthesizing a diamond type carbon film on asubstrate include compounds such as methane, ethane, propane, butane andthe like thereof. Of these alkanes, methane is most particularlypreferred.

Alkenes are compounds having molecules containing a carbon-carbon doublebond. Suitable alkene compounds which may be employed by theabove-described method of synthesizing a diamond type carbon film on asubstrate include compounds such as ethene, propene, n-butene and thelike thereof.

Alkyne compound is a hydrocarbon whose molecules contain a carbon-carbontriple bond. Suitable alkynes which may be employed by theabove-describe method of synthesizing a diamond type carbon film on asubstrate include acetylene, propylene, 1-butylene, 2-butylene and thelike thereof. Of these alkynes, acetylene is most particularlypreferred.

In a preferred embodiment, acetylene is used as the hydrocarbon gas informing the diamond type carbon film. Additionally, mixtures ofhydrocarbon gases such as acetylene/methane may also be used as thehydrocarbon gas.

In order to obtain a film with high thermal stability, the hydrocarbongas utilized in the present process is heavily diluted with hydrogen.The term heavily diluted is defined herein as an admixture of ahydrocarbon with hydrogen such that the final concentration of hydrogenin the admixture constitutes from about 99% to about 50% of the gasmixture. More preferably, the hydrocarbon is diluted with hydrogen suchthat the final concentration of hydrocarbon in the admixture is fromabout 2% to about 10%. Most preferably, the hydrocarbon constitutesabout 2% of the overall gas mixture.

Gases employed by the method 200 can have a purity greater than about95.5%. In a preferred embodiment, the gases have a purity in the rangefrom about 98.5% to about 99.99%. Most preferably, the gases have apurity greater than 99.99%.

The high purity gases are pre-mixed before being introduced into theprocessing space 140. In step S230, above, the gas feed assembly 400 isoperated and controlled to feed the gas mixture into the processingspace 140 to provide a total pressure of hydrocarbon and hydrogen fromabout 1 mTorr to about 600 mTorr. To provide the most effective diamondtype carbon film it is preferred that the pressure of the admixture ofhydrocarbon and hydrogen be about 20-200 mTorr. The above conditions canalso be obtained by controlling and operating the gas feed assembly 400to feed each gas separately.

In step S230, the admixed gas is introduced into the processing space140 at a flow of about 10 standard cubic centimeter per minute (sccm) toabout 100 sccm. More preferably, the flow rate of the reactive gas isfrom about 30 to about 80 sccm. Most preferably, the flow rate of theadmixture of hydrocarbon and helium is about 50 sccm. The mixture isintroduced into the processing space 140 at a pressure of about 1 toabout 1000 mTorr. In one example, the admixture may be introduced at apressure of about 20 m Torr.

After the feeding of the admixed gas is initiated in step S230, in stepS240, the microwave radiation assembly 600 is operated to directmicrowave radiation into the processing space 140 and the UV radiationassembly 700 is operated to direct UV radiation into the processingspace 140, whereupon H, CH₃, CH₂, . . . etc. radicals are released fordeposition of diamond on the substrate. For CNx film, additionalnitrogen source such as nitrogen or ammonia (NH3) are added. Additionaldoping agents can be added to the gas mixture to obtain a doped carbonfilm, for example, boron doped carbon film. Sometimes oxygenationsources such as O₂, CO₂, H₂O are also added as a scavenger for hydrogenin the reactions.

Deposition Apparatus with Remote Reactant Excitation Chamber

Referring now to FIG. 10, a deposition apparatus 10A according to afourth embodiment will be described in detail below.

The deposition apparatus 10A can include the processing chamber 100, thesubstrate stage 200, the vacuum assembly 300, the gas feed assembly 400,the excitation assembly 500, and the controller 800 described above.

The deposition apparatus 10A can further include a remote excitationchamber 1000, an excitation assembly 2000 including a microwaveradiation assembly 3000 and an UV radiation assembly 4000, and anactivated species feed assembly 5000.

The remote excitation chamber 1000 can have a similar construction asprocessing chamber body 110 of processing chamber 100.

The gas feed assembly 400 is configured to feed one or more reactivegases from one or more gas sources into the remote excitation chamber1000. Specifically, the gas feed assembly 400 can be configured to feedone or more reactive gas such as nitrogen, oxygen, ammonia or hydrogeninto the remote excitation chamber 1000.

The excitation assembly 2000 includes the microwave radiation assembly3000 and the UV radiation assembly 4000, each of which is arranged tothe remote excitation chamber 1000. The microwave radiation assembly3000 can include a microwave power source and a microwave applicatorsuch as the microwave power source 610 and the microwave applicator 630,described above. Microwave radiation generated by the microwave powersource is propagated by the microwave applicator and emitted into anexcitation space defined by the remote excitation chamber 1000. UVradiation generated by the UV radiation source is emitted into theexcitation space.

The ultraviolet radiation assembly 4000 can include a UV radiationsource assembly, and an optical window such as the UV radiation sourceassembly 710 and the optical window 720 described above.

The excitation assembly 2000 is controlled and operated to excite thereactive gas to form excited species. Specifically, the microwaveradiation assembly 3000 and the UV radiation assembly 4000 can beindividually operated and controlled to increase the internal energy ofthe reactive gas such that the reactive feed gas is dissociated intoexcited species.

In the fourth embodiment, the excitation space is provided remotely fromthe processing space 140. The activated species feed assembly 5000 caninclude a conduit connected at a first end to a port formed in theremote excitation chamber 1000 and connected at a second end to a portformed in the processing chamber 100. Activated species formed byirradiation with microwave radiation and UV radiation are transported bydiffusion from the excitation space in the remote excitation chamber1000 to the processing space 140 in the processing chamber 100 via theconduit.

The activated species feed assembly 5000 can further include one or moreUV lamps arranged along the conduit. When one or more UV lamps areprovided, the conduit is constructed of a material that permitstransmission of UV radiation from the exterior of the conduit to theinterior of the conduit. UV radiation from UV lamps sustain the activityof the activated species within conduit.

The activated species transported from the excitation space by theconduit into the processing space 140 of the processing chamber 100reacts with a precursor gas to deposit a material on the substrate 20.

In the deposition apparatus 10A, the controller 800 can be furtherconfigured to control the operation of the remote excitation chamber1000, the excitation assembly 2000, including the microwave radiationassembly 3000 and the UV radiation assembly 4000, and the activatedspecies feed assembly 5000.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. An apparatus for depositing a material on asubstrate, the apparatus comprising: a processing chamber defining aprocessing space in which the substrate is arranged; an ultravioletradiation assembly configured to emit ultraviolet radiation into theprocessing space; a microwave radiation assembly configured to emitmicrowave radiation into the processing space; and a gas feed assemblyconfigured to feed: a precursor gas into the processing space, and areactive gas into the processing space, wherein: the ultravioletradiation assembly and the microwave radiation assembly are configuredto be operated in combination to emit ultraviolet radiation andmicrowave radiation to excite at least the reactive gas in theprocessing space, and the material is deposited on the substrate in theprocessing space from the reaction of the precursor gas and the excitedreactive gas.
 2. The apparatus according to claim 1, wherein theultraviolet radiation assembly comprises: an ultraviolet source housingarranged to the processing chamber body; and an ultraviolet sourcearranged within the ultraviolet source housing and configured to emitultraviolet radiation into the processing space.
 3. The apparatusaccording to claim 1, wherein the microwave radiation assemblycomprises: a microwave power source configured to generate microwaveradiation for exciting the reactive gas; and a microwave applicatorconfigured to propagate the microwave radiation generated by themicrowave power source and to emit the microwave radiation into theprocessing space.
 4. The apparatus according to claim 3, wherein themicrowave applicator comprises: an annular waveguide arranged to thechamber body, the annular waveguide having a plurality of slots throughwhich microwave radiation propagated through the annular waveguide isemitted into the processing space; and one or more dielectric windowsbetween the plurality of slots of the annular waveguide and theprocessing chamber body to seal the processing space while allowing themicrowave radiation to pass therethrough.
 5. The apparatus according toclaim 1, wherein: the gas feed assembly comprises a ring-shaped conduithaving a plurality of ports arranged to the processing chamber body andleading into the processing space, and the gas feed assembly providesfluid communication between a source of the reactive gas, a source ofthe precursor gas and a source or carrier gas, and the processing space.6. The apparatus according to claim 1, wherein: the processing chamberbody defines the processing space as a substantially cylindrical space,the processing chamber body comprises: a base wall, a top wall, and aside wall connecting the base wall and the top wall, the ultravioletradiation assembly comprises: an ultraviolet source housing arranged totop wall of the processing chamber body; and an ultraviolet sourcearranged within the ultraviolet source housing and configured to emitultraviolet radiation into the processing space for exciting at leastthe reactive gas, the microwave radiation assembly comprises: amicrowave power source configured to generate microwave radiation; and amicrowave applicator arranged to the side wall of the processing chamberbody, the microwave applicator being configured to propagate themicrowave radiation generated by the microwave power source and to emitthe microwave radiation into the processing space to excite at least thereactive gas.
 7. The apparatus according to claim 1, further comprising:a controller configured to control: the gas feed assembly to feed theprecursor gas and to feed the reactive gas after the feeding of theprecursor gas, and during the feeding of the reactive gas, theultraviolet radiation assembly to emit ultraviolet radiation and themicrowave radiation assembly to emit microwave radiation simultaneously.8. The apparatus according to claim 7, wherein the controller isconfigured to control the microwave radiation assembly withpulse-time-modulation.
 9. The apparatus according to claim 1, furthercomprising: a controller configured to control: the gas feed assembly tofeed the precursor gas and to feed the reactive gas after the feeding ofthe precursor gas, during the feeding of the reactive gas, theultraviolet radiation assembly to emit ultraviolet radiation and themicrowave radiation assembly to emit microwave radiation in sequence.10. An apparatus for depositing a material on a substrate, the apparatuscomprising: a processing chamber defining a processing space in whichthe substrate is arranged; a remote excitation chamber that defines anexcitation space, wherein the excitation space is provided remotely fromthe processing space, a gas feed assembly configured to feed: aprecursor gas into the processing space, and a reactive gas into theexcitation space, an ultraviolet radiation assembly arranged to theremote excitation chamber, wherein the ultraviolet radiation assembly isconfigured to emit ultraviolet radiation into the excitation space toexcite the reactive gas; a microwave radiation assembly arranged to theremove excitation chamber, wherein the microwave radiation assembly isconfigured to emit microwave radiation into the excitation space toexcite the reactive gas; and a conduit communicating the excitationspace and the processing space to facilitate diffusion of excitedreactive gas from the excitation space to the processing space, whereinthe material is deposited on the substrate in the processing space fromthe reaction of the precursor gas and the excited reactive gas.
 11. Theapparatus according to claim 10, wherein: the ultraviolet radiationassembly comprises: an ultraviolet source housing arranged to the remoteexcitation chamber; and an ultraviolet source arranged within theultraviolet source housing and configured to emit ultraviolet radiationinto the excitation space, the microwave radiation assembly comprises: amicrowave power source configured to generate microwave radiation; and amicrowave applicator configured to propagate the microwave radiationgenerated by the microwave power source and to emit the microwaveradiation into the excitation space. the ultraviolet radiation assemblyand the microwave radiation assembly are configured to be operated incombination to emit ultraviolet radiation and microwave radiation toexcite the reactive gas in the excitation space.
 12. A method fordepositing a material on a substrate, the method comprising: feeding aprecursor gas into a processing space in which the substrate isarranged; feeding a reactive gas into the processing space; operating anultraviolet radiation assembly to emit ultraviolet radiation into theprocessing space in combination with operating a microwave radiationassembly to emit microwave radiation into the excitation space to exciteat least the reactive gas; and depositing the material on the substratein the processing space from the reaction of the excited reactive gasand the precursor gas.
 13. The method according to claim 12, whereinduring the feeding of the reactive gas, the ultraviolet radiationassembly is operated to emit ultraviolet radiation and the microwaveradiation assembly is operated to emit microwave radiationsimultaneously.
 14. The method according to claim 13, wherein themicrowave radiation assembly is operated with pulse-time modulation. 15.The method according to claim 12, wherein during the feeding of thereactive gas, the ultraviolet radiation assembly is operated to emitultraviolet radiation and the microwave radiation assembly is operatedto emit microwave radiation in sequence.
 16. A method for depositing amaterial on a substrate, the method comprising: feeding a precursor gasinto a processing space defined by a processing chamber in which thesubstrate is arranged; feeding a reactive gas into an excitation spacedefined by a remote excitation chamber provided remotely from theprocessing space; operating an ultraviolet radiation assembly to emitultraviolet radiation into the excitation space in combination withoperating a microwave radiation assembly to emit microwave radiationinto the excitation space to excite the reactive gas; flowing theexcited reactive gas from the excitation space to the processing space;and depositing the material on the substrate in the processing spacefrom the reaction of the excited reactive gas and the precursor gas.